PART |
Description |
Maker |
IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.077ohm,身份证\u003d 28A条) Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A) Hexfet? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRC540PBF |
HEXFET POWER MOSFET ( VDSS=100V , RDS(on)=0.077Ω , ID=28A ) HEXFET POWER MOSFET ( VDSS=100V , RDS(on)=0.077ヘ , ID=28A )
|
International Rectifier
|
UTT25N08G-TN3-R UTT25N08G-TN3-T UTT25N08L-TN3-T UT |
25A, 80V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
JANSR2N7405 FN4375 |
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 20 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
B25H2S60KL B25H2S20KL B25H2S40KL B25H2S10KL B25H2S |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|600V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|200V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|400V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|100V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1.2KV V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|独立| 1KV交五(无线资源管理)|5A我(翻译
|
SCHURTER AG
|
ISL89400ABZ ISL89401ABZ ISL89401AR3Z-T |
100V, 1.25A Peak, High Frequency Half-Bridge Drivers 100V, 1.25A Peak, High Frequency Half-Bridge Drivers; Temperature Range: Full-Range Ind; Package: 9-DFN T&R
|
Intersil Corporation
|
RFL1P08 RFL1P10 |
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
|
New Jersey Semi-Conductor P...
|
GBJ25005-G GBJ2501-G GBJ2502-G GBJ2504-G |
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=25A Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=25A Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=25A Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=25A
|
Comchip Technology
|
RFP12P10 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs
|
Fairchild Semiconductor
|
IRFN140 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET N沟道BVdss \u003d 100V的,的Rds(on)\u003d 0.077ohm,身份证\u003d 28A条)
|
International Rectifier, Corp.
|